INSULATED-GATE FIELD-EFFECT TRANSISTOR
A class with identifier
http://staging4.data.posccaesar.org/iso/15926-4/rdl/RDS6647200
Definition | An <INSULATED-GATE FIELD-EFFECT TRANSISTOR> is a <FIELD-EFFECT TRANSISTOR> having one or more gate electrodes which are electrically insulated from the channel. |
ISO number | 2979 |
RDS number | RDS6647200 |
Source | IEV 521-04-54 |
Electrical |