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INSULATED-GATE FIELD-EFFECT TRANSISTOR

A class with identifier http://staging4.data.posccaesar.org/iso/15926-4/rdl/RDS6647200

MetadataThis section provides information about 'RDS6647200'.

DefinitionAn <INSULATED-GATE FIELD-EFFECT TRANSISTOR> is a <FIELD-EFFECT TRANSISTOR> having one or more gate electrodes which are electrically insulated from the channel.
ISO number2979
RDS numberRDS6647200
SourceIEV 521-04-54
Electrical

AlignmentThis section lists the most specific P2-superclasses of 'RDS6647200' together with an alignment with corresponding classes in P14, if available.

ContextThis section provides super- and subclasses of 'RDS6647200'.